Impact of floating body and BS-tied architectures on SOI MOSFET´s radio-frequency performances

Author

Rozeau, O. ; Jomaah, J. ; Boussey, J. ; Raynaud, C. ; Pelloie, L. ; Balestra, F.

Author_Institution

LPCS, Grenoble, France

fYear

2000

fDate

2000

Firstpage

124

Lastpage

125

Abstract

The advantages of SOI technologies for radio-frequency applications are now well established in terms of their compatibility with the use of high resistivity substrates which allow fabrication of passive components with good performance. However, these technologies suffer from floating body effects, in particular for analog applications (Tseng et al, 1999). In this work, the floating body effects have been investigated and the impact of the use of the body-source tied architecture on radio-frequency performance has also been analysed

Keywords

MOSFET; UHF field effect transistors; electrical resistivity; microwave field effect transistors; semiconductor device measurement; silicon-on-insulator; BS-tied architecture; SOI MOSFET; SOI MOSFET radio-frequency performances; SOI technologies; Si-SiO₂; analog applications; body-source tied architecture; floating body effect; floating body effects; high resistivity substrates; passive components; radio-frequency applications; radio-frequency performance; Conductivity; Cutoff frequency; Immune system; MOSFET circuits; Parasitic capacitance; Performance analysis; Radio frequency; Scattering parameters; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2000 IEEE International

Conference_Location

Wakefield, MA

ISSN

1078-621X

Print_ISBN

0-7803-6389-2

Type

conf

DOI

10.1109/SOI.2000.892801

Filename

892801