An anomalous device degradation of SOI devices with STI

Author

Lee, Hyeokjae ; Lee, Jong Ho ; Kang, Dae-Gwan ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2000

fDate

2000

Firstpage

132

Lastpage

133

Abstract

The degradation of the electrical characteristics of SOI MOSFETs with STI structure is found to be dependent on the device size. The degradation is due to decreased mobility in N/P MOSFETs caused by the interface roughness (or damage) between STI and channel formed during the dry etch process, and becomes significant with the decrease in channel width and increase in channel length. The magnitude of normalized mobility of wide channel devices is higher 25% than that of narrow channel devices. These phenomena are confirmed by device simulation

Keywords

MOSFET; carrier mobility; interface roughness; isolation technology; semiconductor device measurement; semiconductor device models; silicon-on-insulator; sputter etching; N-MOSFETs; P-MOSFETs; SOI MOSFETs; SOI devices; STI; STI structure; STI-channel interface damage; STI-channel interface roughness; Si-SiO₂; anomalous device degradation; channel length; channel width; decreased carrier mobility; device simulation; device size; dry etch process; electrical characteristics degradation; narrow channel devices; normalized mobility; wide channel devices; Capacitive sensors; Degradation; Dry etching; Electric variables; MOS devices; MOSFETs; Random access memory; Scattering; Semiconductor films; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2000 IEEE International

Conference_Location

Wakefield, MA

ISSN

1078-621X

Print_ISBN

0-7803-6389-2

Type

conf

DOI

10.1109/SOI.2000.892805

Filename

892805