• DocumentCode
    2741829
  • Title

    Investigation of differences between high and low efficiency CIGS solar cell structures using surface analytical techniques

  • Author

    Mount, Gary ; Buyuklimanli, Temel ; Michel, Roger ; Moskito, John ; Robie, Steve ; Sharma, Udit ; Wang, Larry

  • Author_Institution
    Evans Anal. Group, Sunnyvale, CA, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    CuInxGa(1-x)Se2 (CIGS) is one of the most promising thin film PV materials due to its high efficiency, variety of growth methods available, and compatibility with flexible substrates enabling roll-to-roll manufacturing. The goal for all PV is low cost per watt, the solar industry´s key metric. CIGS offers similar manufacturing costs compared with other thin film PV but with the promise of higher efficiency. Significant effort has gone into reducing materials costs, manufacturing costs, and into improving efficiency. But what makes one cell efficient and the next cell less efficient when made using the same process? In this work we compare two CIGS structures, both grown using the same process. One was measured at 6% efficiency and the other was over 12% efficient. Why the difference? We used surface analytical techniques to examine the two cells. We compared layer structure, interfaces, composition, and contaminants looking for differences that might explain the efficiency difference. Can we determine with physical analysis why one solar cell is efficient, while another seemingly identical cell is less efficient? Some measurements showed no difference, some small differences, and some large differences. Identification of differences between high and low efficiency devices could help identify important process control variables.
  • Keywords
    copper compounds; germanium compounds; indium compounds; selenium compounds; semiconductor thin films; solar cells; ternary semiconductors; CIGS layer structure; CIGS solar cell structures; CuInGaSe; contaminants; surface analytical techniques; thin film PV materials; Copper; Gallium; Iron; Manganese; Nickel; Photovoltaic cells; Pollution measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5614693
  • Filename
    5614693