Title :
Error Correction Code Multi-Switch Junction Crossbar Nanomemory Demultiplexer: Performance and Reliability Analysis
Author :
Coker, Ayodeji ; Taylor, Valerie
Abstract :
In this work, the performance and reliability analysis of a crossbar molecular switch nanomemory demultiplexer is studied and results presented. In particular, we investigate the impact on the performance of a crossbar nanomemory demultiplexer of implementing a combination of error correction coding and multi-switch junction fault tolerance schemes. Results indicate that delay and power scale linearly with increasing number of redundant molecular switch junctions. Results also show that by implementing a redundancy of k = 3 and error correction code Hamming distance d = 2, the demultiplexer reliability can be improved to approximately 99% when there is a 20% probability of errors occurring in the demultiplexer. If the Hamming distance is increased to d = 3, then a 30% error rate occurrence can be tolerated. The results of the access time delay analysis also indicate an improvement with respect to increasing redundancy and Hamming distance. Power dissipation penalties were shown to be relatively small when compared with reliability gains.
Keywords :
Hamming codes; delays; error correction codes; fault tolerance; molecular electronics; multiplexing equipment; nanoelectronics; performance evaluation; redundancy; Hamming distance; access time delay analysis; crossbar molecular switch nanomemory demultiplexer; error correction code; error correction coding; molecular switch junction; multi-switch junction fault tolerance; multiswitch junction crossbar nanomemory demultiplexer; performance analysis; power dissipation penalty; redundancy; reliability analysis; Circuit faults; Delay; Error correction codes; Fault tolerance; Hamming distance; Microelectronics; Nanoelectronics; Performance analysis; Redundancy; Switches;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.271