Title :
Fabrication of ZnTe Epilayers for Terahertz Devices Applications
Author :
Qixin Guo ; Kume, Yuichiro ; Fukuhara, Y. ; Tanaka, T. ; Nishio, Masatoshi ; Ogawa, Hiroyo
Author_Institution :
Saga Univ., Saga
Abstract :
ZnTe crystals were grown on sapphire substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. It was found that epitaxial ZnTe layers can be obtained on sapphire substrates. High bandwidth up to 40 THz emission signal was clearly observed from the ZnTe epitaxial layers.
Keywords :
II-VI semiconductors; MOCVD; MOCVD coatings; semiconductor epitaxial layers; semiconductor growth; submillimetre wave spectra; vapour phase epitaxial growth; zinc compounds; Al2O3; ZnTe; crystals; diethyltelluride; dimethylzinc; epilayers; epitaxial layers; metalorganic vapor phase epitaxy; sapphire substrate; terahertz devices application; terahertz emission signal; Bandwidth; Crystalline materials; Crystals; Epitaxial growth; Epitaxial layers; Fabrication; Inorganic materials; Submillimeter wave devices; Substrates; Zinc compounds;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368661
