Title :
Characteristics of native-oxide confined InGaP/(AlxGa 1-x)0.5In0.5P quantum well visible laser diodes
Author :
Sun, Decai ; Treat, D.W.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
We report 670 nm native-oxide confined GaInP-(AlxGa1-x)0.5In0.5P quantum well visible laser diodes. The devices are fabricated from a compressively strained GaInP/(AlxGa1-x)0.5 In0.5P QW double heterostructure laser structure. A real refractive index-guided waveguide is formed by converting part of the p-Al0.5In0.5P cladding layer above the QW active region into an AlOx oxide. Laser diodes of 4 μm wide ridge waveguide operate with threshold currents below 15 mA and differential quantum efficiencies over 60%
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; 670 nm; InGaP-AlGaInP; QW active region; characteristics; cladding layer; compressively strained GaInP/(AlxGa1-x)0.5In0.5P; differential quantum efficiencies; double heterostructure laser structure; native-oxide confined InGaP/(AlxGa1-x)0.5In0.5P quantum well visible laser diodes; real refractive index-guided waveguide; ridge waveguide; threshold currents; Diode lasers; Laser modes; Optical device fabrication; Optical refraction; Optical variables control; Optical waveguides; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711672
