InGaAs/InP p-i-n heterostructure photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy

The first solid-source molecular beam epitaxial growth of In_0.53Ga_0.47As photodetector structure on top of an AlGaAs/GaAs waveguide for monolithic 1.55 μm receiver applications has been demonstrated using a single, thin InP buffer layer to suppress dislocations. Mesa-type detector arrays were made by chemically assisted ion beam etching. Utilizing a novel dense array fabrication technique, we demonstrated the integration of InGaAs optoelectronic devices with AlGaAs/GaAs waveguide films grown on a GaAs substrate. These heterostructure photodiode arrays, which can be readily integrated with GaAs optoelectronic and electronic components, also show high photoresponsivity (0.7 A/W without any antireflection coating), and exhibit a bandwidth in excess of 7 GHz