Title :
Selective growth of II-VI materials on Si(211): First-principle calculations
Author :
Huang, Y. ; Chen, X.S. ; Duan, H. ; Zhou, X.H. ; Lu, W.
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
Using the First-principle calculation software, the adsorptions of CdTe layers and ZnTe layers on the clean and As-passivated Si(211) substrates are simulated respectively. Based on the computational results, we theoretically interpret the important effects of the As4 passivation during the epitaxial growth: arsenic can saturate part of the dangling bonds and weaken the surface states to make the discrepancy of the substrate surface, which induce the B-face polarity selection automatically. This conclusion can provide further explanations for the successful growth of large area high quality CdTe(211)B layers on the Si(211) surfaces.
Keywords :
II-VI semiconductors; ab initio calculations; arsenic; boron alloys; cadmium alloys; epitaxial growth; passivation; silicon; tellurium alloys; zinc alloys; As4; CdTeB; II-VI materials; Si; ZnTe; dangling bonds; epitaxial growth; first-principle calculations; passivation; polarity selection; Atomic layer deposition; Detectors; Epitaxial growth; Geometry; Passivation; Silicon; Substrates; Surface cleaning; Tellurium; Zinc compounds;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368679
