Title :
Suppression of Gate Oscillation of Power MOSFET with Bridge Topology
Author :
Wu, Fengjiang ; Gao, Hanying ; Li Sun ; Zhao, Ke
Author_Institution :
Dept. of Electr. Eng. & Autom., Harbin Inst. of Technol.
Abstract :
In order to suppress the oscillation of gate drive signal of the power MOSFET, a equivalent circuit model of the half-bridge inverter considering stray parameters of the drive circuit is put forward based on the equivalent model of the power MOSFET considering junction capacitances, based on which it is known that the oscillation is caused by the high dv/dt produced during the power MOSFET switching and junction capacitances and distributed inductance. The drive circuit parameters are devised optimally according to the transient timing domain three-dimensional curves of parameters corresponding to the oscillation. The oscillation is suppressed obviously through increasing turn-on time of the power MOSFET, and experimental results are given. Both the theoretic analysis and experimental results indicate that the improved circuit can meet the power MOSFET drive requirement perfectly
Keywords :
bridge circuits; circuit oscillations; inductance; invertors; network topology; power MOSFET; snubbers; bridge topology; distributed inductance; drive circuit; equivalent circuit model; gate drive signal; gate oscillation suppression; half-bridge inverter; junction capacitances; power MOSFET switching; power MOSFET turn-on time; snubber circuit; transient timing domain; Bridge circuits; Capacitance; Circuit topology; Drives; Equivalent circuits; Inductance; Inverters; MOSFET circuits; Power MOSFET; Switching circuits; Half bridge; Oscillation; Power MOSFET; Snubber circuit;
Conference_Titel :
Intelligent Control and Automation, 2006. WCICA 2006. The Sixth World Congress on
Conference_Location :
Dalian
Print_ISBN :
1-4244-0332-4
DOI :
10.1109/WCICA.2006.1713572
