Studies of BaO-Nd2O3-TiO3 thin films by RF Sputter and its TMLs

Author

Bi-yan, Wu ; Shu-rong, Dong

Author_Institution

Zhejiang Gongshang Univ., Hangzhou

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

473

Lastpage

473

Abstract

As a high permittivity and low loss ceramic, BaO-Nd₂O₃-TiO₃ (BNT) is widely used in millimeter wave dielectric resonator. Perfect BNT thin films are obtained by through high density plasma RF sputter, and compared dielectric properties with bulk. The results show that underlay temperature has mainly effect on thin films. The optimize technology is gotten. Through simulation, thin film microstrip line based on BNT has more high integration and more excellent microwave dielectric loss properties than standard microstrip Line.

Keywords

barium compounds; ceramics; dielectric losses; dielectric resonators; dielectric thin films; microstrip lines; microwave materials; millimetre wave devices; neodymium compounds; permittivity; sputtered coatings; thin films; BNT thin films; BaO-Nd₂O₃-TiO₃; RF sputter; high permittivity ceramic; low loss ceramic; microstrip line; microwave dielectric loss; millimeter wave dielectric resonator; Ceramics; Dielectric losses; Dielectric thin films; Microstrip; Millimeter wave technology; Permittivity; Plasma properties; Plasma temperature; Radio frequency; Sputtering; BNT; Thin Film Microstrip Line; dielectric ceramic; dielectric properties; millimeter wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368681

Filename

4222415