DocumentCode
2742476
Title
New Shallow Donors in High-purity Si
Author
Yu, C.H. ; Zhang, B. ; Li, Y.J. ; Lu, W. ; Shen, S.C.
Author_Institution
Chinese Acad. of Sci., Shanghai
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
481
Lastpage
481
Abstract
Two new hydrogenic shallow donors with binding energies of 38.32 and 40.09 meV are observed, in addition to phosphorus (P) and antimony (Sb) donors, in n-type high-purity silicon crystals by means of high-resolution photothermal ionization spectroscopy.
Keywords
antimony; binding energy; elemental semiconductors; impurity states; phosphorus; photothermal spectroscopy; silicon; Si:P; Si:Sb; binding energy; high-resolution photothermal ionization spectroscopy; hydrogenic shallow donors; n-type high-purity silicon crystals; Conductivity; Crystals; Fourier transforms; Ionization; Material properties; Performance evaluation; Physics; Semiconductor impurities; Silicon; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368689
Filename
4222423
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