• DocumentCode
    2742511
  • Title

    A high performance 256K TTL SRAM using 0.8um triple diffused BiCMOS with 3V circuit techniques

  • Author

    Young, I. ; Denham, M. ; Greason, J. ; Kaveh, G. ; Kolousek, J. ; Sarkez, K.

  • Author_Institution
    INTEL Corporation
  • fYear
    1991
  • fDate
    May 30 1991-June 1 1991
  • Firstpage
    17
  • Lastpage
    18
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; CMOS technology; Circuit synthesis; Design methodology; Logic circuits; Logic gates; Random access memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 1991. Digest of Technical Papers. 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIC.1991.760057
  • Filename
    760057