Intense THz radiation from InAs irradiated with femtosecond laser pulses in a magnetic field

Author

Sarukura, N. ; Ohtake, H. ; Murakami, H. ; Ono, S. ; Tsukamoto, T.

Author_Institution

Inst. for Molecular Sci., Okazaki, Japan

fYear

2000

fDate

12-15 Sept. 2000

Firstpage

63

Lastpage

64

Abstract

Although it is considered that the generation mechanism for narrow band-gap semiconductors, such as InAs and InSb, originates from the photo-Dember field and the optical rectification besides carrier acceleration by the depletion field, its mechanism is not well understood. To investigate the mechanism, we applied a magnetic field of up to 5 T to InAs and observed saturation of THz-radiation from femtosecond-laser irradiated InAs in a high magnetic field.

Keywords

Dember effect; III-V semiconductors; high field effects; indium compounds; laser beam effects; narrow band gap semiconductors; submillimetre wave generation; 0 to 5 T; InAs; carrier acceleration; depletion field; femtosecond laser pulses; generation mechanism; high magnetic field; intense terahertz radiation; narrow band-gap semiconductors; optical rectification; photo-Dember field; Acceleration; Frequency; Geometry; Laser excitation; Laser theory; Magnetic fields; Optical design; Optical pulses; Polarization; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on

Conference_Location

Beijing, China

Print_ISBN

0-7803-6513-5

Type

conf

DOI

10.1109/ICIMW.2000.892938

Filename

892938