Title :
Wide bandgap semiconductor RF power devices
Author_Institution :
Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
AlGaN HFET´s have achieved the highest fmax 97 GHz. 4H-SiC MESFET´s have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). On the other hand, 4H-SiC SIT´s have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four SIT´s with a total source periphery of 94.5 cm has been demonstrated
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; silicon compounds; static induction transistors; wide band gap semiconductors; 4H-SiC MESFET; 4H-SiC SIT; AlGaN; AlGaN HFET; RF power device; SiC; wide bandgap semiconductor; Aluminum gallium nitride; Gallium nitride; HEMTs; III-V semiconductor materials; MESFETs; MODFETs; Radio frequency; Silicon carbide; Substrates; Wide band gap semiconductors;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711676
