DocumentCode :
2742798
Title :
Large area nanocrystalline silicon based multi-junction solar cells with superior light soaking stability
Author :
Xu, X. ; Su, T. ; Ehlert, S. ; Pietka, G. ; Bobela, D. ; Beglau, D. ; Zhang, J. ; Li, Y. ; DeMaggio, G. ; Worrel, C. ; Lord, K. ; Yue, G. ; Yan, B. ; Beernink, K. ; Liu, F. ; Banerjee, A. ; Yang, J. ; Guha, S.
Author_Institution :
United Solar Ovonic LLC, Troy, MI, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
We present our progress in attaining high efficiency nc-Si:H solar cells at high deposition rates with superior light soaking stability. We have focused our effort on three areas: (i) improving the spatial uniformity and homogeneous properties for nc-Si:H, such as crystallite grain size and volume fraction, (ii) optimizing nucleation and seed layer during the initial growth of the nc-Si:H film, and (iii) optimizing nc-Si:H bulk growth and grain evolution. We have conducted an extensive study of the effect of process parameters including hydrogen dilution profiling, VHF power, and substrate temperature on the nc-Si:H film properties and component cell characteristics. We also conducted light soaking tests both indoors and outdoors. The a-Si:H/nc-Si:H/nc-Si:H triple-junction cells incorporating the optimized nc-Si:H component cells show significantly higher performance, achieving an 11.2% AM1.5 stabilized efficiency for both encapsulated large-area (464 cm2) cells and inter-connected modules (2320 cm2). To the best of our knowledge, this is the highest stabilized efficiency for a large-area thin-film silicon module.
Keywords :
elemental semiconductors; grain size; nanostructured materials; silicon; solar cells; Si:H; VHF power; crystallite grain size; deposition rates; hydrogen dilution profiling; interconnected modules; light soaking stability; nanocrystalline multijunction solar cells; seed layer; spatial uniformity; substrate temperature; triple junction solar cells; volume fraction; Degradation; Films; Grain boundaries; Indium tin oxide; Photovoltaic cells; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614737
Filename :
5614737
Link To Document :
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