Title : 
Zonal structure of a spectrum of magneto-plasma waves in periodic semiconducting lattice
         
        
            Author : 
Bulgakov, A.A. ; Shramkova, O.V.
         
        
            Author_Institution : 
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
         
        
        
        
        
        
            Abstract : 
Research of stratified-periodic mediums has been rousing constant interest in scientific literature for many years. Quoted papers apply to various materials and various frequency ranges, but the availability of a translating symmetry in researched structures is common in these papers. The interest for such research is due to the fact that the periodic structures represent a new type of artificially created material. The properties of such structures are suitable for operation while changing structure of layers or their dimensions. The specific pass-band zone arising in stratified periodic semiconductor-dielectric structure located in a magnetic field is examined in the paper. The existence of this zone is conditioned by the distribution of surface magneto-plasma waves along the boundaries of a structure, by percolating (or tunneling) of the fields of these waves through layers of a structure and by forming of a collective mode.
         
        
            Keywords : 
percolation; periodic structures; semiconductor-insulator boundaries; surface plasmons; tunnelling; collective mode; pass-band zone; percolating; periodic semiconducting lattice; semiconductor-dielectric structure; surface magneto-plasma waves; translating symmetry; tunneling; zonal structure; Dielectrics; Electromagnetic wave polarization; Frequency; Lattices; Magnetic fields; Magnetic semiconductors; Maxwell equations; Periodic structures; Semiconductivity; Surface waves;
         
        
        
        
            Conference_Titel : 
Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on
         
        
            Conference_Location : 
Beijing, China
         
        
            Print_ISBN : 
0-7803-6513-5
         
        
        
            DOI : 
10.1109/ICIMW.2000.892952