Title :
A High-Density Dual-Port Memory Cell Operation For ULSI DRAMs
Author :
Hidaka, H. ; Arimoto, K. ; Fujishima, K.
Author_Institution :
Mitsubishi Electric Corporation
fDate :
May 30 1991-June 1 1991
Keywords :
Capacitance; Circuits; Clocks; Degradation; Interference suppression; Laboratories; Large scale integration; Random access memory; Research and development; Ultra large scale integration;
Conference_Titel :
VLSI Circuits, 1991. Digest of Technical Papers. 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIC.1991.760080
