Title :
Design of distributed amplifier with L-type networks
Author :
Xu, Jian ; Wang, Gong-Zhi ; Zhang, Ying
Author_Institution :
Instn. of RF-&OE-ICs, Southeast Univ., Nanjing, China
Abstract :
The characteristic impedance of L-type and T-type networks are investigated for the distributed amplifier (DA) design respectively. The analysis shows that the L-type network has better frequency characteristics than the T-type one. Two distributed amplifiers with L- and T-type network are designed with 2-μm GaAs HBT process for comparison. The simulation results demonstrate that the DA with L-type network has broader 3-dB bandwidth than that of the DA with T-type network.
Keywords :
III-V semiconductors; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; GaAs; HBT process; L-type networks; T-type networks; characteristic impedance; distributed amplifier design; size 2 mum; Bandwidth; Distributed amplifiers; Heterojunction bipolar transistors; Impedance; Power transmission lines; Simulation;
Conference_Titel :
Ultra-Wideband (ICUWB), 2010 IEEE International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-5305-4
Electronic_ISBN :
978-1-4244-5306-1
DOI :
10.1109/ICUWB.2010.5614751
