DocumentCode
2743100
Title
Multi-GHz Monolithic Voltage-Controlled Oscillators In Advanced Silicon Bipolar Technology
Author
Soyuer, M. ; Warnock, J.D. ; Kai-Yap Toh ; Ching-Te Chuang ; Sun, J.Y.C. ; Stein, K.J. ; Basavaiah, S. ; Joshi, R.V.
Author_Institution
IBM Research Division
fYear
1991
fDate
May 30 1991-June 1 1991
Firstpage
81
Lastpage
82
Abstract
Relaxation-type Monolithic Silicon Bipolar Voltage-controlled Oscillators (VCOs) With Center Frequencies Ranging From 1.5 To 5 GHz Are Described. The Maximum Oscillating Frequency Achieved Is 7.4 Ghz. The VCOs Dissipate About 70 mW From a 3.6 V Supply, Including The Output Buffer And Voltage-to-current Converter Stages. Two Types Of On-chip Timing Capacitor Structures And Various Configurations Used In Achieving These Results Are Described. A Wide Tuning Range Has Been Achieved Which Is Sufficient To Cover The Normal Process Tolerances And Supply Variations Expected In A Practical Environment. The Circuits Are Fabricated In An Advanced 0.8 /spl mu/m Double-poly Self-aligned Bipolar Technology.
Keywords
Capacitors; Circuit optimization; Clocks; Dielectrics; Frequency estimation; Timing; Tuning; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 1991. Digest of Technical Papers. 1991 Symposium on
Conference_Location
Oiso, Japan
Type
conf
DOI
10.1109/VLSIC.1991.760088
Filename
760088
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