Title :
Multi-GHz Monolithic Voltage-Controlled Oscillators In Advanced Silicon Bipolar Technology
Author :
Soyuer, M. ; Warnock, J.D. ; Kai-Yap Toh ; Ching-Te Chuang ; Sun, J.Y.C. ; Stein, K.J. ; Basavaiah, S. ; Joshi, R.V.
Author_Institution :
IBM Research Division
fDate :
May 30 1991-June 1 1991
Abstract :
Relaxation-type Monolithic Silicon Bipolar Voltage-controlled Oscillators (VCOs) With Center Frequencies Ranging From 1.5 To 5 GHz Are Described. The Maximum Oscillating Frequency Achieved Is 7.4 Ghz. The VCOs Dissipate About 70 mW From a 3.6 V Supply, Including The Output Buffer And Voltage-to-current Converter Stages. Two Types Of On-chip Timing Capacitor Structures And Various Configurations Used In Achieving These Results Are Described. A Wide Tuning Range Has Been Achieved Which Is Sufficient To Cover The Normal Process Tolerances And Supply Variations Expected In A Practical Environment. The Circuits Are Fabricated In An Advanced 0.8 /spl mu/m Double-poly Self-aligned Bipolar Technology.
Keywords :
Capacitors; Circuit optimization; Clocks; Dielectrics; Frequency estimation; Timing; Tuning; Voltage; Voltage-controlled oscillators;
Conference_Titel :
VLSI Circuits, 1991. Digest of Technical Papers. 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIC.1991.760088