Preparation and properties of vanadium dioxide thin films for uncooled microbolometer

Author

Changhong Chen ; Xinjian Yi ; Xingrong Zhao ; Bifeng Xiong

Author_Institution

Huazhong Univ. of Sci. & Technol., Wuhan, China

fYear

2000

fDate

12-15 Sept. 2000

Firstpage

145

Lastpage

146

Abstract

Vanadium dioxide thin films are used for uncooled microbolometers due to their high temperature coefficient of resistance (TCR). This paper describes the preparation and properties of the films. The films are deposited on a quartz substrate by low temperature reactive ion-beam sputtering and post annealing at a temperature of 500/spl deg/C. The X-ray photoelectron spectroscopy (XPS) indicates that the films are mixed vanadium oxides of mainly V/sup 4+/ and V/sup 5+/. The TCR value of -1.86%K/sup -1/ at a temperature of 25/spl deg/C is achieved through electrical conductivity measurements.

Keywords

X-ray photoelectron spectra; annealing; bolometers; infrared detectors; sputter deposition; sputtered coatings; thin films; vanadium compounds; 500 C; SiO/sub 2/; V/sup 4+/; V/sup 5+/; VO/sub 2/ thin films; VO/sub 2/-SiO/sub 2/; X-ray photoelectron spectroscopy; XPS; electrical conductivity measurements; film preparation; high TCR; low temperature reactive ion-beam sputtering; mixed vanadium oxides; post annealing; quartz substrate; temperature coefficient of resistance; uncooled microbolometer; Annealing; Chemicals; Conductivity; Optical devices; Optical films; Sputtering; Substrates; Tellurium; Temperature measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on

Conference_Location

Beijing, China

Print_ISBN

0-7803-6513-5

Type

conf

DOI

10.1109/ICIMW.2000.892973

Filename

892973