Title :
Preparation and properties of vanadium dioxide thin films for uncooled microbolometer
Author :
Changhong Chen ; Xinjian Yi ; Xingrong Zhao ; Bifeng Xiong
Author_Institution :
Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
Vanadium dioxide thin films are used for uncooled microbolometers due to their high temperature coefficient of resistance (TCR). This paper describes the preparation and properties of the films. The films are deposited on a quartz substrate by low temperature reactive ion-beam sputtering and post annealing at a temperature of 500/spl deg/C. The X-ray photoelectron spectroscopy (XPS) indicates that the films are mixed vanadium oxides of mainly V/sup 4+/ and V/sup 5+/. The TCR value of -1.86%K/sup -1/ at a temperature of 25/spl deg/C is achieved through electrical conductivity measurements.
Keywords :
X-ray photoelectron spectra; annealing; bolometers; infrared detectors; sputter deposition; sputtered coatings; thin films; vanadium compounds; 500 C; SiO/sub 2/; V/sup 4+/; V/sup 5+/; VO/sub 2/ thin films; VO/sub 2/-SiO/sub 2/; X-ray photoelectron spectroscopy; XPS; electrical conductivity measurements; film preparation; high TCR; low temperature reactive ion-beam sputtering; mixed vanadium oxides; post annealing; quartz substrate; temperature coefficient of resistance; uncooled microbolometer; Annealing; Chemicals; Conductivity; Optical devices; Optical films; Sputtering; Substrates; Tellurium; Temperature measurement; Transistors;
Conference_Titel :
Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-7803-6513-5
DOI :
10.1109/ICIMW.2000.892973
