DocumentCode
27433
Title
Compositional Dependence of the Young’s Modulus and Piezoelectric Coefficient of (110)-Oriented Pulsed Laser Deposited PZT Thin Films
Author
Nazeer, Hammad ; Nguyen, Minh D. ; Sukas, Ozlem Sardan ; Rijnders, Guus ; Abelmann, Leon ; Elwenspoek, Miko C.
Author_Institution
Transducers Sci. & Technol. Group, Univ. of Twente, Enschede, Netherlands
Volume
24
Issue
1
fYear
2015
fDate
Feb. 2015
Firstpage
166
Lastpage
173
Abstract
In this contribution, we report on the compositional dependence of the mechanical and piezoelectric properties of Pb(ZrxTi1-x)O3 (PZT) thin films fabricated by pulsed laser deposition (PLD). These films grow epitaxially on silicon with a (110) preferred orientation and have excellent piezoelectric properties, which make them outstanding candidates for application in microelectromechanical system devices. Vibrometric measurements on capacitors showed that the effective longitudinal piezoelectric coefficient (d33,f) of 100-nm thick PZT films has a maximum value of 72 pm/V for a composition of x = 0.52. The Young´s modulus was determined by measuring the difference in the flexural resonance frequencies of cantilevers before and after the deposition of the PZT thin films. The compositional dependence of the Young´s modulus shows an increase in value for the Zr-rich compositions, which is in agreement with the trend observed in their bulk ceramic counterparts. From the obtained dielectric constant and d33,f, we show that the calculated coupling coefficients of the PLD-PZT thin films have higher values for most of the compositions than their ceramic counterparts.
Keywords
Young´s modulus; cantilevers; epitaxial growth; lead compounds; micromechanical devices; permittivity; piezoelectric thin films; pulsed laser deposition; vibration measurement; (110) preferred orientation; PZT thin films; Pb(ZrxTi1-x)O3; Si; Young´s modulus; Zr-rich compositions; bulk ceramic counterparts; cantilevers; capacitors; compositional dependence; coupling coefficients; dielectric constant; epitaxial growth; flexural resonance frequencies; longitudinal piezoelectric coefficient; microelectromechanical system devices; piezoelectric properties; pulsed laser deposition; size 100 nm; thick PZT films; vibrometric measurements; Capacitors; Ceramics; Frequency measurement; Resonant frequency; Silicon; Substrates; Young´s modulus; Coupling coefficient; Pb(ZrₓTi₁₋ₓ)O₃ (PZT); Pb(ZrxTi1-x)O3 (PZT); Young´s modulus; Young???s modulus; coupling coefficient.; piezoelectric coefficient;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2014.2323476
Filename
6823632
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