Title :
Resonant tunneling through single InAs quantum dot at room temperature
Author :
Lu, Wei ; Li, Tianxin ; Xiong, Dayuan ; Chen, Pingping ; Xia, Changsheng ; Liu, Zhaolin ; Chen, Xiaoshuang
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
Transport properties of freestanding InAs quantum dots on GaAs(001) are investigated by means of conductive atomic force microscopy. Resonant tunneling through the hole state of valence-band of single quantum dot is observed at room temperature. The threshold bias for resonant tunneling is related with the dot size, while the amplitude of tunneling current changes little when the height of dot varies from 2 to 10 nm.
Keywords :
III-V semiconductors; atomic force microscopy; quantum dots; resonant tunnelling; valence bands; GaAs; InAs; conductive atomic force microscopy; freestanding quantum dots; hole state; resonant tunneling; size 2 nm to 10 nm; temperature 293 K to 298 K; transport property; Atomic force microscopy; Gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Photonic crystals; Quantum dots; Quantum entanglement; Resonant tunneling devices; Surface morphology; Temperature;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368737
