DocumentCode
2743395
Title
"Safe" charge-injection waveforms for iridium oxide (AIROF) microelectrodes
Author
Troyk, P.R. ; Detlefsen, D.E. ; Cogan, S.F. ; Ehrlich, J. ; Bak, M. ; McCreery, D.B. ; Bullara, L. ; Schmidt, E.
Author_Institution
Illinois Inst. of Technol., Chicago, IL, USA
Volume
2
fYear
2004
fDate
1-5 Sept. 2004
Firstpage
4141
Lastpage
4144
Abstract
Use of anodic bias improves the charge-injection limits of activated iridium oxide (AIROF) microelectrodes. Asymmetric waveforms, in which the charge balancing anodic phase is delivered at a lower current density and longer pulse width, has been found to allow for higher values of anodic bias voltages, thus maximizing the AIROF charge-injection capacity. Limiting the voltage excursion of the AIROF below the value at which electrolysis of water occurs is essential to maintaining the long-term viability of implanted electrodes. However, maintaining the electrodes at an anodic bias state while keeping the electrode voltage within these electrochemically "safe" limits complicates the topology of the electronic driver circuitry. We present two possible driver topologies that use compliance-voltage limitation in combination with cathodic current modification.
Keywords
charge injection; driver circuits; iridium compounds; microelectrodes; neurophysiology; prosthetics; IrO/sub 2/; activated iridium oxide microelectrodes; anodic bias voltages; asymmetric waveforms; cathodic current modification; charge balancing anodic phase; compliance-voltage limitation; electronic driver circuitry; implanted electrodes; neural stimulation; safe charge-injection waveforms; water electrolysis; Circuit topology; Current density; Driver circuits; Electrochemical processes; Electrodes; Laboratories; Microelectrodes; Prosthetics; Space vector pulse width modulation; Voltage; AIROF; Microelectrodes; anodic bias; charge-injection; iridium; neural stimulation; waveforms;
fLanguage
English
Publisher
ieee
Conference_Titel
Engineering in Medicine and Biology Society, 2004. IEMBS '04. 26th Annual International Conference of the IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-8439-3
Type
conf
DOI
10.1109/IEMBS.2004.1404155
Filename
1404155
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