DocumentCode :
2743534
Title :
Terahertz Emission Properties of p-InAs Surface Radiation under Different Excitations
Author :
Zhao, Guozhong ; Sun, Hongqi ; Tian, Yan ; Zhang, Cunlin
Author_Institution :
Capital Normal Univ., Beijing
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
544
Lastpage :
544
Abstract :
Terahertz (THz) emission properties of p-InAs surface radiation under the different excitations of femtosecond pulses are studied by means of time-domain spectroscopy. The experimental results show that the spectral waveform and amplitude of terahertz radiation are different for the excitations with different wavelengths. The full-width of half-maximum (FWHM) of THz radiation excited by the short wavelength of pulse is larger than that of the long wavelength. THz emission strength increases with increasing of pump wavelength. The peak amplitude of THz pulse increases linearly with increasing of the excitation power. It provides a useful reference for the application of THz emitter.
Keywords :
arsenic compounds; emission; indium compounds; submillimetre wave lasers; submillimetre wave spectroscopy; time-domain analysis; FWHM; InAs; femtosecond pulse; full-width-half-maximum; p-InAs surface radiation; spectral waveform; terahertz emission properties; terahertz radiation; time-domain spectroscopy; Crystals; Doping; Frequency; Laser excitation; Material properties; Optical pulses; Physics; Spectroscopy; Sun; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368752
Filename :
4222486
Link To Document :
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