Title :
Ultralow-threshold (0.56 mA) 1.35-μm InGaAsP/InP compressive-strained-MQW lasers
Author :
Uomi, K. ; Tsuchiya, T. ; Komori, M. ; Oka, A. ; Shinoda, K. ; Oishi, A.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
Extremely low threshold currents of 0.56 mA (pulsed) and 0.58 mA (CW) have been obtained in a 1.35-μm InGaAsP/InP strained-MQW laser, at room temperature. These values are the lowest ever reported for long-wavelength lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; 0.56 mA; 1.35 mum; 298 K; InGaAsP-InP; InGaAsP/InP laser; compressive-strained-MQW lasers; long-wavelength lasers; room temperature; strained-MQW laser; threshold currents; ultralow-threshold; Capacitive sensors; Current measurement; Fiber lasers; Indium phosphide; Quantum well devices; Reflectivity; Semiconductor lasers; Strain measurement; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518899
