Title :
InAsSb/AlAsSb double-heterostructure and InAsSb/InAlAs quantum-well diode lasers emitting at ~4 μm
Author :
Choi, H.K. ; Turner, G.W. ; Liau, Z.L.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Studies InAsSb/AlAsSb double-heterostructure lasers emitting at 3.9 μm which operated pulsed up to 170 K and CW up to 105 K, with CW power of 30 mW at 70 K. InAsSb/InAlAs quantum-well lasers emitting at 4.5 μm operated pulsed up to 85 K
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; laser beams; quantum well lasers; semiconductor lasers; 105 K; 170 K; 3.9 mum; 30 mW; 4.5 mum; 70 K; 85 K; CW power; InAsSb-AlAsSb; InAsSb-InAlAs; InAsSb/AlAsSb double-heterostructure laser; InAsSb/InAlAs quantum-well diode lasers; laser operation; DH-HEMTs; Diode lasers; Gas lasers; Laser radar; Optical pulses; Power lasers; Quantum well lasers; Semiconductor lasers; Temperature; X-ray lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518903
