Title :
Boron-doped microcrystalline-phase involved amorphous silicon oxide windows prepared by Cat-CVD
Author :
Matsumoto, Yasuhiro ; Yu, Zhenrui
Author_Institution :
Electr. Eng. Dept., Centro de Investigacion y de Estudios Avanzados del IPN, Mexico City
Abstract :
Different amounts of oxygen involved boron-doped hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (muc-Si:H) deposition were carried out using catalytic chemical-vapor deposition (Cat-CVD) process. Pure silane (SiH4), hydrogen (H 2), oxygen (O2), and diluted diborane (B2 H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100degC. Sample transmittance measurement shows an optical-band gap (Egopt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil~1900degC. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations
Keywords :
X-ray diffraction; amorphous state; boron; catalysis; chemical vapour deposition; energy gap; silicon compounds; solar cells; tungsten; 0.1 to 0.5 Torr; 1700 to 2100 C; B2H6; Cat-CVD process; H2; O2; SiH4; SiOx:B; SiOx:H; X-ray diffraction spectra; XRD; a-Si:H; amorphous silicon oxide windows; boron-doped hydrogenated amorphous silicon; boron-doped microcrystalline-phase; catalytic chemical-vapor deposition; deposition pressure; diluted diborane; hydrogen; hydrogenated microcrystalline silicon; optical-band gap; oxygen; sample transmittance measurement; silane; solar cell windows; tungsten catalyst temperature; tungsten filament degradation; Amorphous silicon; Chemical processes; Gases; Hydrogen; Optical diffraction; Optimized production technology; Temperature; Tungsten; X-ray diffraction; X-ray scattering; Boron-doped Silicon Oxide; Catalytic-CVD; Microcrystalline silicon; Solar Cell Windows;
Conference_Titel :
Electrical and Electronics Engineering, 2006 3rd International Conference on
Conference_Location :
Veracruz
Print_ISBN :
1-4244-0402-9
Electronic_ISBN :
1-4244-0403-7
DOI :
10.1109/ICEEE.2006.251848
