Integrated Silicon P-I-N-Structures for Modulation in Terahertz Range

Author

Grimalsky, V. ; Chillon, D. ; Gutierrez-D, E. ; Koshevaya, S.

Author_Institution

Nat. Inst. for Astrophys., Opt., & Electron., Puebla

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

1

Lastpage

4

Abstract

Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures are investigated. The generalization of well-known Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p⁺⁺, n⁺⁺ regions. The problem of double injection into i-region has been simulated in a two-dimensional case. The investigations of modulational properties of integrated p-i-n-structures in THz range have demonstrated a possibility to use these structures up to the frequencies ap6 THz

Keywords

electrodes; heavily doped semiconductors; modulators; semiconductor junctions; silicon; submillimetre wave devices; 6 THz; Fletcher boundary condition; Si; THz; doped region; electrode; modulation properties; modulator; silicon integrated p-i-n-structure; terahertz range; Astrophysics; Boundary conditions; Charge carrier processes; Electrodes; Frequency; Integrated optics; Millimeter wave technology; Optical modulation; Silicon; Spontaneous emission; Terahertz electromagnetic waves; highly doped regions; integrated p-i-n-structures; wide-band modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineering, 2006 3rd International Conference on

Conference_Location

Veracruz

Print_ISBN

1-4244-0402-9

Electronic_ISBN

1-4244-0403-7

Type

conf

DOI

10.1109/ICEEE.2006.251850

Filename

4017935