DocumentCode
2743859
Title
AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n+ re-growth
Author
Wu, Y.F. ; Kapolnek, D. ; Kozodoy, P. ; Thibeault, B. ; Keller, S. ; Keller, B.P. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1997
fDate
8-11 Sep 1997
Firstpage
431
Lastpage
434
Abstract
n+ regrown source-drain regions have been used for AlGaN/GaN MODFETs to obtain a low-resistance ohmic contact and clear-cut ohmic boundaries which will potentially facilitate fabrication of deep submicron-gate devices. The process consists: 1. Formation of the SiO 2 re-growth mask by E-beam evaporation and lift-off; 2. Removal of the AlGaN layer in the ohmic region by RIE; 3. n+ GaN re-growth in the MOCVD reactor; 4. Ohmic metal deposition and annealing. A transfer ohmic contact resistance of 0.44 Ω-mm was achieved. Much improved device performance was obtained with the new ohmic scheme over the conventional scheme with the same metalisation
Keywords
III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; ohmic contacts; semiconductor device metallisation; AlGaN-GaN; AlGaN/GaN MODFET; MOCVD; RIE; SiO2 mask; annealing; deep submicron gate device; e-beam evaporation; fabrication; lift-off; metallisation; ohmic boundary; ohmic contact resistance; ohmic metal deposition; source/drain n+ regrowth; Aluminum gallium nitride; Annealing; Contact resistance; Fabrication; Gallium nitride; HEMTs; Inductors; MOCVD; MODFETs; Ohmic contacts;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7503-0556-8
Type
conf
DOI
10.1109/ISCS.1998.711683
Filename
711683
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