DocumentCode :
2743862
Title :
Study of dry etching process using SF6 and CF4/O2 for Nb/NbxSi1−x/Nb Josephson-junction fabrication
Author :
Zhong, Qing ; Cao, Wenhui ; Li, Jinjin ; Zhong, Yuan ; Wang, Xueshen
Author_Institution :
Nat. Inst. of Metrol., Beijing, China
fYear :
2012
fDate :
1-6 July 2012
Firstpage :
46
Lastpage :
47
Abstract :
Both SF6 and CF4 are plasma chemistries that are often used during dry etching in fabricating the niobium Josephson junctions. This paper presents the preliminary experimental results of using these two etches on etching Nb/NbxSi1-x/Nb Josephson junctions in NIM.
Keywords :
Josephson effect; niobium; niobium alloys; silicon alloys; sputter etching; Josephson junction fabrication; Nb-NbxSi1-x-Nb; dry etching; plasma chemistry; Etching; Josephson junctions; Junctions; Niobium; Standards; Sulfur hexafluoride; CF4; ICP; Josephson junctions; NbSi; RIE; SF6; SNS; dry etch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location :
Washington, DC
ISSN :
0589-1485
Print_ISBN :
978-1-4673-0439-9
Type :
conf
DOI :
10.1109/CPEM.2012.6250653
Filename :
6250653
Link To Document :
بازگشت