DocumentCode
2743862
Title
Study of dry etching process using SF6 and CF4 /O2 for Nb/Nbx Si1−x /Nb Josephson-junction fabrication
Author
Zhong, Qing ; Cao, Wenhui ; Li, Jinjin ; Zhong, Yuan ; Wang, Xueshen
Author_Institution
Nat. Inst. of Metrol., Beijing, China
fYear
2012
fDate
1-6 July 2012
Firstpage
46
Lastpage
47
Abstract
Both SF6 and CF4 are plasma chemistries that are often used during dry etching in fabricating the niobium Josephson junctions. This paper presents the preliminary experimental results of using these two etches on etching Nb/NbxSi1-x/Nb Josephson junctions in NIM.
Keywords
Josephson effect; niobium; niobium alloys; silicon alloys; sputter etching; Josephson junction fabrication; Nb-NbxSi1-x-Nb; dry etching; plasma chemistry; Etching; Josephson junctions; Junctions; Niobium; Standards; Sulfur hexafluoride; CF4 ; ICP; Josephson junctions; NbSi; RIE; SF6 ; SNS; dry etch;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Conference_Location
Washington, DC
ISSN
0589-1485
Print_ISBN
978-1-4673-0439-9
Type
conf
DOI
10.1109/CPEM.2012.6250653
Filename
6250653
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