Title :
Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer
Author :
Ramdane, A. ; Ougazzaden, A. ; Devaux, F. ; Delorme, F. ; Schneider, M. ; Landreau, J. ; Gloukhian, A.
Author_Institution :
CNET, Bagneux, France
Abstract :
Summary form only given. A novel and very simple approach is demonstrated for strained layer InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration with very high performance at 1.5 μm (13.6 dB extinction ratio at 1.5 V operating voltage for a 70 μm long modulator)
Keywords :
III-V semiconductors; deformation; distributed feedback lasers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser modes; quantum well lasers; 1.5 V; 1.5 mum; 70 mum; InGaAsP; InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration; MQW monolithically integrated DFB laser; electroabsorption modulator; extinction ratio; high performance; operating voltage; single active layer; strained layer; Bandwidth; Extinction ratio; Lasers and electrooptics; Monolithic integrated circuits; Protons; Quantum well devices; Telecommunications; Voltage;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518909
