Title :
Acousto-electric attenuation analysis of metal/ZnO/oxide/Si SAW devices
Author :
Sugai, K. ; Ohmori, K. ; Takakuni, H. ; Minagawa, S.
Author_Institution :
Clarion Co. Ltd., Fukushima, Japan
Abstract :
A novel method for modeling the process of an acoustoelectric interaction between SAW (surface acoustic wave) potential and carriers in a metal/ZnO/oxide/Si structure has been developed. The SAW attenuation constants in the proposed attenuator where pn diode arrays are formed in the propagation path of a SAW are analyzed numerically. The method is composed of a DC and a RF analysis. In the DC analysis, the two-dimensional distributions of potential and carriers are analyzed. In the RF analysis, deriving the admittance of the silicon substrate, the acoustoelectric attenuation constants are obtained. It was found that the injected carriers and the particular surface carrier distribution at the transition region from accumulation to depletion are dominant factors in the characteristics of the SAW attenuator. It is concluded that a maximum variable range of about 70 dB/cm can be obtained in the SAW attenuator if one uses a thick epitaxial layer with resistivity upto 200 Ω-cm
Keywords :
acoustic signal processing; acoustoelectric devices; attenuators; electric admittance; notch filters; surface acoustic wave filters; DC analysis; MZOS structure; RF analysis; SAW attenuation constants; Si substrate; ZnO-SiO2-Si; accumulation to depletion; acoustoelectric interaction; attenuation analysis; carrier distribution; metal/ZnO/oxide/Si; optimum design method; pn diode arrays; potential distribution; programmable notch filter; surface admittance; transition region; Acoustic propagation; Acoustic waves; Admittance; Attenuation; Attenuators; Diodes; Radio frequency; Silicon; Surface acoustic waves; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
Conference_Location :
Honolulu, HI
DOI :
10.1109/ULTSYM.1990.171366
