• DocumentCode
    2743961
  • Title

    Acousto-electric attenuation analysis of metal/ZnO/oxide/Si SAW devices

  • Author

    Sugai, K. ; Ohmori, K. ; Takakuni, H. ; Minagawa, S.

  • Author_Institution
    Clarion Co. Ltd., Fukushima, Japan
  • fYear
    1990
  • fDate
    4-7 Dec 1990
  • Firstpage
    269
  • Abstract
    A novel method for modeling the process of an acoustoelectric interaction between SAW (surface acoustic wave) potential and carriers in a metal/ZnO/oxide/Si structure has been developed. The SAW attenuation constants in the proposed attenuator where pn diode arrays are formed in the propagation path of a SAW are analyzed numerically. The method is composed of a DC and a RF analysis. In the DC analysis, the two-dimensional distributions of potential and carriers are analyzed. In the RF analysis, deriving the admittance of the silicon substrate, the acoustoelectric attenuation constants are obtained. It was found that the injected carriers and the particular surface carrier distribution at the transition region from accumulation to depletion are dominant factors in the characteristics of the SAW attenuator. It is concluded that a maximum variable range of about 70 dB/cm can be obtained in the SAW attenuator if one uses a thick epitaxial layer with resistivity upto 200 Ω-cm
  • Keywords
    acoustic signal processing; acoustoelectric devices; attenuators; electric admittance; notch filters; surface acoustic wave filters; DC analysis; MZOS structure; RF analysis; SAW attenuation constants; Si substrate; ZnO-SiO2-Si; accumulation to depletion; acoustoelectric interaction; attenuation analysis; carrier distribution; metal/ZnO/oxide/Si; optimum design method; pn diode arrays; potential distribution; programmable notch filter; surface admittance; transition region; Acoustic propagation; Acoustic waves; Admittance; Attenuation; Attenuators; Diodes; Radio frequency; Silicon; Surface acoustic waves; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
  • Conference_Location
    Honolulu, HI
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1990.171366
  • Filename
    171366