Low-chirp integrated EA-modulator/DFB laser grown by selective-area MOVPE

Author

Johnson, J.E. ; Tanbun-Ek, T. ; Chen, Y.K. ; Fishman, D.A. ; Logan, R.A. ; Morton, P.A. ; Chu, S.N.G. ; Tate, A. ; Sergent, A.M. ; Sciortino, P.F., Jr. ; Wecht, K.W.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1994

fDate

19-23 Sep 1994

Firstpage

41

Lastpage

42

Abstract

Summary form only given. 2.5 Gbit/s transmission over 517 km of standard fiber is reported using a monolithically integrated InGaAsP MQW EA modulator/DFB laser by selective-area MOVPE. A low chirp of 0.13 Å peak-peak and good reliability are shown

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; quantum well lasers; semiconductor device reliability; semiconductor growth; vapour phase epitaxial growth; 2.5 Gbit/s; 517 km; DFB laser; InGaAsP; good reliability; integrated EA-modulator; low chirp; low-chirp; monolithically integrated InGaAsP MQW EA modulator; selective-area MOVPE; selective-area MOVPE semiconductor growth; standard fiber; Bit error rate; Chirp modulation; Electrons; Epitaxial growth; Epitaxial layers; Fiber lasers; Gratings; Measurement standards; Power lasers; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.518910

Filename

518910