Title :
Low-chirp integrated EA-modulator/DFB laser grown by selective-area MOVPE
Author :
Johnson, J.E. ; Tanbun-Ek, T. ; Chen, Y.K. ; Fishman, D.A. ; Logan, R.A. ; Morton, P.A. ; Chu, S.N.G. ; Tate, A. ; Sergent, A.M. ; Sciortino, P.F., Jr. ; Wecht, K.W.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Summary form only given. 2.5 Gbit/s transmission over 517 km of standard fiber is reported using a monolithically integrated InGaAsP MQW EA modulator/DFB laser by selective-area MOVPE. A low chirp of 0.13 Å peak-peak and good reliability are shown
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; quantum well lasers; semiconductor device reliability; semiconductor growth; vapour phase epitaxial growth; 2.5 Gbit/s; 517 km; DFB laser; InGaAsP; good reliability; integrated EA-modulator; low chirp; low-chirp; monolithically integrated InGaAsP MQW EA modulator; selective-area MOVPE; selective-area MOVPE semiconductor growth; standard fiber; Bit error rate; Chirp modulation; Electrons; Epitaxial growth; Epitaxial layers; Fiber lasers; Gratings; Measurement standards; Power lasers; Quantum well devices;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518910
