Title :
Terahertz detection and emission related to two dimensional plasma oscillations in nanometer size transistors
Author_Institution :
Univ. Montpellier 2, Montpellier
Abstract :
In this work we present an overview of experimental results on THz detection and emission by nanotransistors. We present recent results on THz emission obtained in different types of InGaAs/InP and GaN/AlGaN nanometric high electron mobility transistors.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; nanoelectronics; plasma oscillations; submillimetre wave detectors; GaN-AlGaN; InGaAs-InP; nanometric high electron mobility transistors; nanotransistors; terahertz detection; terahertz emission; two dimensional plasma oscillations; FETs; Frequency; HEMTs; Indium gallium arsenide; MODFETs; Plasma applications; Plasma temperature; Plasma waves; Radiation detectors; Resonance;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368778
