Title :
High power quantum-well gain-coupled (GC) DFB lasers at 1.3 μm and 1.55 μm
Author :
Borchert, B. ; Rieger, J. ; Stegmüller, B.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
Summary form only given. High power characteristics of InGaAsP quantum-well gain-coupled DFB lasers with a loss grating are presented. Among these are record single-mode (SM) values of 115 mW at 1.3 μm and 95 mW at 1.55 μm. The SM-yield at 20 mW is as high as 66%
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; optical communication equipment; optical couplers; optical losses; quantum well lasers; 1.3 mum; 1.55 mum; 115 mW; 20 mW; 95 mW; InGaAsP; InGaAsP quantum-well gain-coupled DFB lasers; high power characteristics; high power quantum-well gain-coupled DFB lasers; loss grating; single-mode values; Diodes; Electrons; Gain measurement; Power generation; Power lasers; Power measurement; Quantum well lasers; Samarium; Temperature; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518912
