Title :
Room Temperature CW Operation of Antimonide MQW Laser Diodes beyond 3 μm
Author :
Lin, C. ; Grau, M. ; Amann, M.-C.
Author_Institution :
Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., Shanghai
Abstract :
Room temperature continuous wave operation of AlGaAsSb/GalnAsSb MQW diode lasers emitting beyond 3 μm were demonstrated. To increase the valence band offset of the quantum wells, AlGalnAsSb digital alloy was introduced as barriers in the active region. Pulsed mode operation at 3.25 μm up to 50°C has been achieved.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor lasers; valence bands; AlGaAsSb-GaInAsSb; continuous wave operation; digital alloy; multiple-quantum-well diode lasers; pulsed mode operation; temperature 293 K to 298 K; temperature 50 °C; valence band; wavelength 3.25 μm; Capacitive sensors; Digital alloys; Diode lasers; Laser modes; Optical waveguides; Pulse measurements; Quantum well devices; Quantum well lasers; Temperature; Waveguide lasers;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0399-5
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368794
