Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy

Author

Park, J.W. ; Pavlidis, D. ; Mohammadi, S. ; Dua, C. ; Garcia, J.C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

439

Lastpage

442

Abstract

A new emitter design based on composite AlGaAs/GaInP approach is described which allows significant reduction of C_BE and improved high frequency performance. Self-aligned composite AlGaAs/GaInP and traditional emitter design HBTs were fabricated on CBE layers grown with TBA/TBP precursors. C_BE of composite emitter HBTs is significantly lower than for traditional designs and does not show significant variation with collector current. This leads to enhanced f _τ characteristics for composite emitter HBT designs and confirms the theoretical expectations. The C_BE achieved with the new designs was by at least 4 times lower than that of conventional transistors and resulted in 20% enhancement of cutoff frequency

Keywords

III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; AlGaAs-GaInP; AlGaAs/GaInP heterojunction bipolar transistor; TBA/TBP precursor; chemical beam epitaxy; collector current; cutoff frequency; fabrication; high frequency characteristics; self-aligned composite emitter; Capacitance; Chemicals; Cutoff frequency; Electron emission; Epitaxial growth; Etching; Gallium arsenide; Gold; Heterojunction bipolar transistors; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711687

Filename

711687