Anomalously slow carrier-phonon interaction in InGaAs/InGaAsP multi-quantum-well investigated by time-development of carrier temperature

Author

Nido, Masaaki ; Suzuki, Akira

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan

fYear

1994

fDate

19-23 Sep 1994

Firstpage

61

Lastpage

62

Abstract

Extremely large electron-LO phonon intrasubband scattering time (8 ps) was obtained, by the rate-equation analysis for the experimental time-development of the carrier temperature in a 1.5 μm-band multi-quantum-well (MQW) laser amplifier. Consequently, pronounced optical output power saturation was predicted in the MQW laser

Keywords

III-V semiconductors; electron-phonon interactions; gallium arsenide; gallium compounds; indium compounds; optical saturation; quantum well lasers; 1.5 mum; InGaAs-InGaAsP; InGaAs/InGaAsP; MQW laser; carrier temperature; carrier-phonon interaction; electron-LO phonon intrasubband scattering time; laser amplifier; multi-quantum-well; optical output power saturation; rate-equation analysis; time-development; Indium gallium arsenide; Optical amplifiers; Optical saturation; Optical scattering; Phonons; Power generation; Quantum well devices; Stimulated emission; Temperature; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.518919

Filename

518919