DocumentCode
274450
Title
Long wavelength OEIC on GaAs-on-InP heterostructure
Author
Suzuki, A. ; Itoh, T. ; Shikada, M.
Author_Institution
NEC Corp., Kanagawa, Japan
fYear
1988
fDate
11-15 Sep 1988
Firstpage
11
Abstract
The authors describe long wavelength OEICs on GaAs-on-InP heterostructures. The InP-based optical components and GaAs integrated circuits are monolithically integrated on InP substrates. The great potential of GaAs-on-InP heterostructure for high-performance long wavelength OEICs is demonstrated
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; GaAs-InP; III-V semiconductors; long wavelength OEICs; monolithic integration; optoelectronic integrated circuits;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93510
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