Title :
GaInAs monolithic photoreceiver integrating PIN/JFET with diffused junctions and a resistor
Author :
Renaud, J.C. ; Lugiez, F. ; Vuye, S. ; Allovon, M. ; Nguyen, L. ; Scavannec, A. ; Bourdon, B.
Author_Institution :
CNET, Lab. de Bagneux, France
Abstract :
An integrated PIN/JFET/resistor has been developed using a GaInAs epitaxial structure grown on a planar substrate with four layers allowing separate optimization of both active devices. Owing to the good performances and high reliability of individual components, the sensitivity of such monolithic photoreceivers is evaluated as -30 dBm at 560 Mbit/s (10-9 bit error rate)
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; monolithic integrated circuits; optical communication equipment; p-i-n diodes; photodetectors; receivers; sensitivity; 560 Mbit/s; GaInAs monolithic photoreceiver; III-V semiconductors; diffused junctions; integrated PIN/JFET/resistor; integrated optoelectronics; monolithic photoreceivers; optical communication; reliability; resistor; sensitivity;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
