Title :
A fully integrated high sensitivity PIN/FET optical receiver at 250 MBaud
Author :
Bates, R. J S ; Rogers, D.L.
Author_Institution :
IBM J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A fully integrated GaAs optical receiver has been fabricated and operated at 250 MBaud, yielding a 10-9 BER sensitivity of -39.5 dBm at 0.845 μm, equivalent to 1910 photons/bit. This result refutes the conventional wisdom of the superiority of hybrid over integrated optical receivers
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; p-i-n diodes; receivers; 0.845 micron; 250 Mbit/s; BER sensitivity; GaAs optical receiver; III-V semiconductor; PIN/FET optical receiver; bit error ratio; integrated optical receivers; integrated optoelectronics; optical communication;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
