• DocumentCode
    274453
  • Title

    A fully integrated high sensitivity PIN/FET optical receiver at 250 MBaud

  • Author

    Bates, R. J S ; Rogers, D.L.

  • Author_Institution
    IBM J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1988
  • fDate
    11-15 Sep 1988
  • Firstpage
    25
  • Abstract
    A fully integrated GaAs optical receiver has been fabricated and operated at 250 MBaud, yielding a 10-9 BER sensitivity of -39.5 dBm at 0.845 μm, equivalent to 1910 photons/bit. This result refutes the conventional wisdom of the superiority of hybrid over integrated optical receivers
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; p-i-n diodes; receivers; 0.845 micron; 250 Mbit/s; BER sensitivity; GaAs optical receiver; III-V semiconductor; PIN/FET optical receiver; bit error ratio; integrated optical receivers; integrated optoelectronics; optical communication;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    93513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274453