• DocumentCode
    2744606
  • Title

    Temperature and output power dependence of carrier overflow and internal loss in InGaAs/InGaAsP multiple quantum well lasers

  • Author

    Tessler, N. ; Mikhaelashvili, V. ; Nagar, R. ; Eisenstein, G. ; Dentai, A.G. ; Joyner, C.H. ; Chandrasekhar, S.

  • Author_Institution
    Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    67
  • Lastpage
    68
  • Abstract
    The authors demonstrate temperature and output power dependence of internal loss in multiple quantum well lasers resulting from carrier overflow effects
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; optical losses; quantum well lasers; waveguide lasers; InGaAs-InGaAsP; InGaAs/InGaAsP; carrier overflow; carrier overflow effects; internal loss; multiple quantum well lasers; output power dependence; temperature dependence; Capacitive sensors; Density measurement; Indium gallium arsenide; Length measurement; Loss measurement; Power generation; Predictive models; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.518922
  • Filename
    518922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2744606