DocumentCode
2744652
Title
Field emission characteristics of CVD diamond coated copper field emitters
Author
Xie Kuojun ; Zeng Baoqing ; Yang Zhonghai
Author_Institution
Inst. of High Energy Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2000
fDate
12-15 Sept. 2000
Firstpage
341
Lastpage
342
Abstract
The polycrystalline diamond films were synthesized on a copper substrate by microwave plasma chemical vapor deposition technique. The field emission characteristics and the electrical characteristics of contacts between metal and diamond film have investigated.
Keywords
copper; diamond; electron field emission; ohmic contacts; plasma CVD coatings; semiconductor thin films; semiconductor-metal boundaries; vacuum microelectronics; C-Cu; CVD diamond coated Cu field emitters; Cu; Cu substrate; FEA; NEA; chemical vapor deposition technique; electrical characteristics; field emission characteristics; metal/diamond film interface; microwave plasma CVD technique; negative electron affinity; polycrystalline diamond films; Chemical vapor deposition; Contact resistance; Copper; Current measurement; Electrodes; Electron emission; Ohmic contacts; Scanning electron microscopy; Substrates; Thermal expansion;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on
Conference_Location
Beijing, China
Print_ISBN
0-7803-6513-5
Type
conf
DOI
10.1109/ICIMW.2000.893056
Filename
893056
Link To Document