DocumentCode :
2744889
Title :
Designing high-efficiency class-E LDMOS power amplifier
Author :
He Songbai ; Wang Huadong ; You Fei ; Liao Jichang ; Liu Meirui
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu
fYear :
2007
fDate :
11-13 July 2007
Firstpage :
369
Lastpage :
372
Abstract :
Multifunctional RF front ends need to transmit different types of signals while maintaining efficiency and signal quality, we show that switched mode class-E power amplifiers can achieve high efficiency at RF frequency. In this paper, a 20W class-E power amplifier has been designed using MRF21030. The input match network and output network has been simulated carefully and the output efficiency of power amplifier is 63%. Further more, the effect of Vdd and input power have also been analyzed.
Keywords :
power MOSFET; power amplifiers; class-E LDMOS power amplifier design; multifunctional radiofrequency front end; power 20 W; Reactive power; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on
Conference_Location :
Kokura
Print_ISBN :
978-1-4244-1473-4
Type :
conf
DOI :
10.1109/ICCCAS.2007.6250715
Filename :
6250715
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2744889
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