DocumentCode
274500
Title
An inversion channel technology for opto-electronic integration
Author
Crawford, D.L. ; Taylor, G.W. ; Kiely, P.A. ; Cooke, P. ; Izabelle, A. ; Chang, T.Y. ; Tell, B. ; Lebby, M.S. ; Brown-Goebeler, K. ; Simmons, J.G.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
fYear
1988
fDate
11-15 Sep 1988
Firstpage
211
Abstract
The merits of opto-electronic integration are now well established. Achieving compatibility of the processing technology of the optical and electrical components in the most significant obstacle to progress. A new approach for achieving both compatibility and improved performance is described in the form of a new family of inversion channel devices. The inversion channel of electrons in these devices is induced at a heterointerface by a charge sheet of donors placed at the heterointerface
Keywords
field effect integrated circuits; integrated optoelectronics; compatibility; donor charge sheet; heterointerface; inversion channel technology; performance;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93560
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