Title :
An inversion channel technology for opto-electronic integration
Author :
Crawford, D.L. ; Taylor, G.W. ; Kiely, P.A. ; Cooke, P. ; Izabelle, A. ; Chang, T.Y. ; Tell, B. ; Lebby, M.S. ; Brown-Goebeler, K. ; Simmons, J.G.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
The merits of opto-electronic integration are now well established. Achieving compatibility of the processing technology of the optical and electrical components in the most significant obstacle to progress. A new approach for achieving both compatibility and improved performance is described in the form of a new family of inversion channel devices. The inversion channel of electrons in these devices is induced at a heterointerface by a charge sheet of donors placed at the heterointerface
Keywords :
field effect integrated circuits; integrated optoelectronics; compatibility; donor charge sheet; heterointerface; inversion channel technology; performance;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
