Title :
Low-frequency noise characterization of high- and low-reliability AlGaAs/GaAs single HBTs
Author :
Mohammadi, Saeed ; Pavlidis, Dimitris ; Bayraktaroglu, Burhan
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Self-aligned AlGaAs/GaAs Single HBTs were fabricated using different epilayers with identical layer structure and processing technology. These HBTs manifested different long-term reliability characteristics despite their identical device design and similar DC characteristics. The low-frequency noise characterization of these devices revealed generation-recombination centers with activation energies from 120 meV to 200 meV. The base-emitter region 1/f noise of these devices was found to be in correlation with the long-term reliability
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device noise; semiconductor device reliability; 1/f noise; AlGaAs-GaAs; DC characteristics; activation energy; device design; epilayer; fabrication; generation-recombination center; low frequency noise; reliability; self-aligned AlGaAs/GaAs single HBT; Chemical technology; Fingers; Heterojunction bipolar transistors; Integrated circuit noise; Low-frequency noise; MOCVD; Performance evaluation; Stress; Temperature; Testing;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711691
