• DocumentCode
    274517
  • Title

    A GaAs 16×16 MESFET crosspoint switch at 1700 Mbits/sec

  • Author

    Scott, G.R. ; Anderson, C.I.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1988
  • fDate
    11-15 Sep 1988
  • Firstpage
    280
  • Abstract
    A fully integrated GaAs MESFET 16×16 crosspoint switch has been fabricated on a 3×4 mm chip using a 1 μm super-buffer logic (SBL) design consisting of approximately 1300 equivalent NOR-3 gates and operating at 800 mW of power. A 99% confidence bit error rate (BER) better than 10-13 was obtained at a 1.7 Gbit/sec rate using a 27-1 pseudo-random NRZ sequence
  • Keywords
    III-V semiconductors; electronic switching systems; field effect integrated circuits; gallium arsenide; logic arrays; semiconductor switches; 16*16 MESFET crosspoint switch; 1700 Mbit/s; 800 mW; GaAs; III-V semiconductors; NOR-3 gates; bit error rate; pseudo-random NRZ sequence; super buffer logic design;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    93577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274517