DocumentCode
274532
Title
1.5 μm InGaAsP/InP BH-BIG-DBR lasers
Author
Nomura, T. ; Watanabe, T. ; Katsuda, H. ; Suzaki, S.
Author_Institution
Opto-Electron. Lab., Fujikura Ltd, Chiba, Japan
fYear
1988
fDate
11-15 Sep 1988
Firstpage
349
Abstract
Taking advantage of the bundle-integrated-guide (BIG) structure proposed by Tohmori et al. (1985), the authors have developed a high productivity process for BIG-distributed-Bragg-reflector (DBR) lasers emitting at 1.5 μm with good lasing characteristics
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.5 micron; III-V semiconductor; InGaAsP-InP; InGaAsP/InP BH-BIG-DBR lasers; active region; bundle-integrated-guide; distributed Bragg reflector; high productivity process;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93593
Link To Document