• DocumentCode
    2745379
  • Title

    The Plasma Bipolar Junction phototransistor: coupling electron-hole and electron-ion plasmas

  • Author

    Li, Benben ; Houlahan, Thomas, Jr. ; Wagner, Clark J. ; Tchertchian, Paul A. ; Sievers, Dane J. ; Eden, J. Gary

  • Author_Institution
    Lab. for Opt. Phys. & Eng., Univ. of Illinois at Urbana-Champaign, Champaign, IL, USA
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    15
  • Lastpage
    16
  • Abstract
    Coupling semiconductor (e--h+) and gas phase plasmas with a strong electric field yields a transistor exhibiting photosensitivity and voltage gain but also a light-emitting collector whose radiative output can be switched and modulated.
  • Keywords
    bipolar transistors; light emitting devices; phototransistors; plasma devices; solid-state plasma; coupling semiconductor; electron-hole plasmas; electron-ion plasmas; gas phase plasmas; light-emitting collector; photosensitivity; plasma bipolar junction phototransistor; radiative output power; voltage gain; Integrated circuits; Integrated optics; Junctions; Photonics; Phototransistors; Plasmas; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110402
  • Filename
    6110402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2745379