DocumentCode
274539
Title
Advanced noise investigations on InGaAsP/InP DFB lasers
Author
Idler, W. ; Schweizer, H. ; Lang, R.J. ; Klenk, M. ; Wunstel, K. ; Mozer, A.
Author_Institution
Standard Elektrik Lorenz AG, Res. Centre, Stuttgart, West Germany
fYear
1988
fDate
11-15 Sep 1988
Firstpage
380
Abstract
Terminal electrical noise (TEN) measurements on DFB lasers are presented. The authors employed this technique for studying the intrinsic laser behaviour, the optical feedback sensitivity and for an advanced laser characterization. TEN results indicate: changes in emission spectra, backreflection sensitivity depending on the κL-product and sidebands of the field spectrum
Keywords
III-V semiconductors; distributed feedback lasers; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; InGaAsP-InP; InGaAsP/InP DFB lasers; backreflection sensitivity; emission spectra; field spectrum; intrinsic laser behaviour; laser characterization; noise; optical feedback sensitivity; semiconductor; sidebands; terminal electrical noise;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93600
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